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| ISSUED DATE :2005/09/05 REVISED DATE : GESD1060 Description NPN EPITAXIAL PLANAR T RANSISTOR The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features & Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A, Low Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 O A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings (TA=25 : ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Total Device Dissipation (TC=25 : ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD TJ Tstg Ratings 60 50 6 5 9 30 150 -55 ~ +150 Unit V V V A A W : : Electrical Characteristics (TA = 25 : unless otherwise noted) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob ton (Turn-on Time) tstg (Storage Time) tf (Fall Time) Min. 60 50 6 70 30 Typ. 30 100 0.1 1.4 0.2 Max. 100 100 0.4 280 *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Unit V V V uA uA V IC=1mA, IE=0 IC=1mA, IB=0 IE=1mA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 IC=3A, IB=0.3A VCE=2V, IC=1A VCE=2V, IC=3A MHz pF uS VCE=5V, IC=1A Test Conditions VCB=10V, IE=0, f=1MHz See specified test circuit GESD1060 Page: 1/3 ISSUED DATE :2005/09/05 REVISED DATE : Classification Of hFE1 Rank Range Q 70 - 140 R 100 - 200 S 140 - 280 Switching Time Test Circuit Characteristics Curve GESD1060 Page: 2/3 ISSUED DATE :2005/09/05 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GESD1060 Page: 3/3 |
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